APTM50HM75STG APTM50HM75STG C rev 6 october, 2013 www.microsemi.com 1 C 7 out1 out2 g1s1 cr2a q1 cr1a cr3b cr1b g2s2 nt c1 cr2b q2 cr4b 0/vbu s cr4a cr3a g4 g3 s3s4 q4 nt c2 q3 vbus all ratings @ t j = 25c unless otherwise specified absolute maximum ratings these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 500 v i d continuous drain current t c = 25c 46 a t c = 80c 34 i dm pulsed drain current 184 v gs gate - source voltage 30 v r dson drain - source on resistance 90 m p d maximum power dissipation t c = 25c 357 w i ar avalanche current (repetitive and non repetitive) 46 a e ar repetitive avalanche energy 50 mj e as single pulse avalanche energy 2500 v dss = 500v r dson = 75m typ @ tj = 25c i d = 46a @ tc = 25c application ? motor control ? switched mode power supplies ? uninterruptible power supplies features ? power mos 7 ? mosfets - low r dson - low input and miller capacitance - low gate charge - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? internal thermistor for temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant full bridge series & parallel diodes mosfet power module downloaded from: http:///
APTM50HM75STG APTM50HM75STG C rev 6 october, 2013 www.microsemi.com 2 C 7 electrical characteristics symbol characteristic test conditions min typ max unit i dss zero gate voltage drain current v gs = 0v,v ds = 500v t j = 25c 100 a v gs = 0v,v ds = 400v t j = 125c 500 r ds(on) drain C source on resistance v gs = 10v, i d = 23a 75 90 m v gs ( th ) gate threshold voltage v gs = v ds , i d = 2.5ma 3 5 v i gss gate C source leakage current v gs = 30 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 25v f = 1mhz 5600 pf c oss output capacitance 1200 c rss reverse transfer capacitance 90 q g total gate charge v gs = 10v v bus = 250v i d = 46a 123 nc q gs gate C source charge 33 q gd gate C drain charge 65 t d(on) turn-on delay time inductive switching @ 125c v gs = 15v v bus = 333v i d = 46a r g = 5 18 ns t r rise time 35 t d(off) turn-off delay time 87 t f fall time 77 e on turn-on switching energy inductive switching @ 25c v gs = 15v, v bus = 333v i d = 46a, r g = 5 ? 755 j e off turn-off switching energy 726 e on turn-on switching energy inductive switching @ 125c v gs = 15v, v bus = 333v i d = 46a, r g = 5 ? 1241 j e off turn-off switching energy 846 r thjc junction to case thermal resistance 0.35 c/w series diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v i rm maximum reverse leakage current v r =600v 250 a i f dc forward current t c = 70c 30 a v f diode forward voltage i f = 30a 1.6 1.8 v i f = 60a 1.9 i f = 30a t j = 125c 1.4 t rr reverse recovery time i f = 30a v r = 400v di/dt = 200a/s t j = 25c 85 ns t j = 125c 160 q rr reverse recovery charge t j = 25c 130 nc t j = 125c 700 r thjc junction to case thermal resistance 1.2 c/w downloaded from: http:///
APTM50HM75STG APTM50HM75STG C rev 6 october, 2013 www.microsemi.com 3 C 7 parallel diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v i rm maximum reverse leakage current v r = 600v 250 a i f dc forward current t c = 70c 30 a v f diode forward voltage i f = 30a 1.6 1.8 v i f = 60a 1.9 i f = 30a t j = 125c 1.4 t rr reverse recovery time i f = 30a v r = 400v di/dt = 200a/s t j = 25c 85 ns t j = 125c 160 q rr reverse recovery charge t j = 25c 130 nc t j = 125c 700 r thjc junction to case thermal resistance 1.2 c/w thermal and package characteristics symbol characteristic min max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 c t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m5 2.5 4.7 n.m wt package weight 160 g temperature sensor ntc (see application note apt0406 on www.microsemi.com). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 sp4 package outline (dimensions in mm) see application note apt0501 - mounting instructions for sp4 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTM50HM75STG APTM50HM75STG C rev 6 october, 2013 www.microsemi.com 4 C 7 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 sin g le pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse durati on 5.5v 6v 6.5v 7v 7.5v 8v 0 20 40 60 80 100 120 140 160 180 0 5 10 15 20 25 i d , drain current (a) v ds , drain to source voltage (v) v gs =10&15v low voltage output characteristics t j =25c t j =125c 0 20 40 60 80 100 120 012345678 i d , drain current (a) v gs , gate to source voltage (v) transfert characteristics v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle v gs =10v v gs =20v 0.90 0.95 1.00 1.05 1.10 1.15 1.20 0 2 04 06 08 01 0 0 i d , drain current (a) r ds (on) vs drain current r ds (on) drain to source on resistance normalized to v gs =10v @ 23a 0 10 20 30 40 50 25 50 75 100 125 150 i d , dc drain current (a) t c , case temperature ( c) dc drain current vs case temperature downloaded from: http:///
APTM50HM75STG APTM50HM75STG C rev 6 october, 2013 www.microsemi.com 5 C 7 0.9 1.0 1.1 1.2 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage (normalized) 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 t j , junction temperature (c) on resistance vs temperature r ds (on), drain to source on resistance (normalized) v gs =10v i d =23a 0.6 0.7 0.8 0.9 1.0 1.1 25 50 75 100 125 150 t c , case temperature (c) threshold voltage vs temperature v gs (th), threshold voltage (normalized) limited by r ds on 10ms 1ms 100s 1 10 100 1000 1 10 100 1000 i d , drain current (a) v ds , drain to source voltage (v) maximum safe operating area limited by r dson single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 0 1 02 03 04 05 0 c, capacitance (pf) v ds , drain to source voltage (v) capacitance vs drain to source voltage v ds =100v v ds =250v v ds =400v 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 140 160 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =46a t j =25c downloaded from: http:///
APTM50HM75STG APTM50HM75STG C rev 6 october, 2013 www.microsemi.com 6 C 7 td(on) td(off) 0 20 40 60 80 100 10 20 30 40 50 60 70 t d(on) and t d(off) (ns) i d , drain current (a) delay times vs current v ds =333v r g =5 ? t j =1 25 c l=100h t r t f 0 20 40 60 80 100 120 10 20 30 40 50 60 70 t r and t f (ns) i d , drain current (a) rise and fall times vs current v ds =333v r g =5 ? t j =1 25 c l=100h hard switching zcs zvs 0 50 100 150 200 250 300 350 400 10 15 20 25 30 35 40 frequency (khz) i d , drain current (a) operating frequency vs drain current v ds =333v d=50% r g =5 ? t j =1 25 c t c =75 c t j =25c t j =150c 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 i dr , reverse drain current (a) v sd , source to drain voltage (v) source to drain diode forward voltage e on e off 0 0.5 1 1.5 2 2.5 10 20 30 40 50 60 70 switching energy (mj) i d , drain current (a) switching energy vs current v ds =333v r g =5 ? t j =1 25 c l=100h e on e off 0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 02 03 04 05 0 switching energy (mj) gate resistance (ohms) switching energy vs gate resistance v ds =333v i d =46a t j =1 25 c l=100h downloaded from: http:///
APTM50HM75STG APTM50HM75STG C rev 6 october, 2013 www.microsemi.com 7 C 7 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microse mi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, emp loyees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damage s and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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